Depth profiles of manganese implants in InP after annealing
- 1 September 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (5) , 1803-1808
- https://doi.org/10.1063/1.336031
Abstract
This paper reports on depth profiles of Mn implants, after annealing, obtained by secondary ion mass spectrometry. Two types of samples implanted with manganese were studied: unintentionally doped n-type (5–10×1015 e cm−3), and n-type S-doped (n=5×1018 e cm−3) substrates. In unintentionally doped substrates it is found that Mn exhibits a well-defined two-species diffusion front as other acceptors: Be, Zn, or Cd. On the contrary in S-doped substrates it does not move. The study of the correlations between the movement of the residual impurities and the implanted Mn atoms, or Zn in a comparative sample, has led us to propose a model based on an interstitial-substitutional reaction involving the impurity sites and taking place in the bulk of the semiconductor.This publication has 17 references indexed in Scilit:
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