Nonlocal pseudopotentials for Ge and GaAs
- 15 February 1974
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 9 (4) , 1552-1559
- https://doi.org/10.1103/physrevb.9.1552
Abstract
Nonlocal pseudopotentials are constructed for Ge and GaAs. Agreement with interband optical edges in the region 0-7 eV is achieved to within 0.05 eV. The by-products of the calculation are: an improved fit to valence-band edges as measured by photoemission; an improved critical-point topology for the energy difference between the lowest conduction and highest valence bands; and more significant local-pseudopotential parameters.Keywords
This publication has 27 references indexed in Scilit:
- Calculated Valence-Band Densities of States and Photoemission Spectra of Diamond and Zinc-Blende SemiconductorsPhysical Review B, 1973
- Surface-State Transitions of Silicon in Electron Energy-Loss SpectraPhysical Review Letters, 1973
- Schottky-Barrier Electroreflectance: Application to GaAsPhysical Review B, 1973
- Nonlocal Pseudopotential for GePhysical Review Letters, 1973
- Photoemission Valence-Band Densities of States for Si, Ge, and GaAs Using Synchrotron RadiationPhysical Review Letters, 1972
- X-Ray Photoemission Spectra of Crystalline and Amorphous Si and Ge Valence BandsPhysical Review Letters, 1972
- Combined Interpolation Scheme for Transition and Noble MetalsPhysical Review B, 1967
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- Reflectance and Photoemission From SiPhysical Review Letters, 1962
- Energy-Band Interpolation Scheme Based on a PseudopotentialPhysical Review B, 1958