Characteristics for a-Si:H Films Prepared by Mercury-Sensitized Photochemical Vapor Deposition
- 1 October 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (10A) , L1573
- https://doi.org/10.1143/jjap.26.l1573
Abstract
The density of states in a-Si:H, prepared by mercury-sensitized photo-CVD, was measured by the space-charge-limited current method. The density of Si dangling bonds (N s) was measured by the electron spin resonance method. N s and a minimum of the density-of-state near the Fermi level (N min) indicated the same tendency versus substrate temperature, which showed a good correlation between N s and N min. Both N s and N min showed a minimum value near substrate temperature of 200°C. Photosensitivity reached more than 1×106 for the sample.Keywords
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