Characterization of Photo-CVD a-Si:H Films by Thin-Film Transistor Structure
- 1 October 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (10A) , L811
- https://doi.org/10.1143/jjap.25.l811
Abstract
To investigate the dependence of transport properties of photo-CVD a-Si:H on deposition temperature, field effect mobility (µFE) and threshold voltage (V th) of thin film transistor (TFT) fabricated on a-Si:H prepared at different substrate temperatures were measured. Both µFE and V th and corresponding photoluminescence (PL) intensity show an optimum value at the deposition temperature of 200°C.Keywords
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