Surface segregation at metalndashIII-V-compound-semiconductor interfaces

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Abstract
In this paper we analyze the results of a wide range of photoemission studies of metal–III-V-compound-semiconductor interface formation. We find that semiconductor atoms segregate to the vacuum surface of the metal overlayer in most cases and that the presence of these atoms accounts for the slow attenuation of the observed core emission intensities. A theoretical model is developed which predicts such segregation based on the cohesive energy and the relative atomic sizes of the substrate and overlayer species. Good agreement between the predictions of this model and experiment for GaAs and InP is achieved.

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