Epitaxial growth over optical gratings on GaAs
- 1 July 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (1) , 67-68
- https://doi.org/10.1063/1.1655282
Abstract
Epitaxial layers of GaAs have been successfully grown on corrugated GaAs substrates. Growth techniques were such that the corrugation was preserved during the growth process. Growth conditions are described which permit p‐n junctions containing corrugations of period suitable for electrically pumped distributed‐feedback lasers in GaAs to be produced. This work demonstrates that there are no fundamental limitations on growing buried corrugations in GaAs for a large variety of integrated optical devices.Keywords
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