BIAS-DEPENDENT STRUCTURE IN EXCESS NOISE IN GaAs SCHOTTKY TUNNEL JUNCTIONS
- 1 January 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (1) , 35-37
- https://doi.org/10.1063/1.1653469
Abstract
Large‐amplitude excess noise has been observed in the tunneling current of degenerate p‐type GaAs–Au Schottky junctions. At 4.2 K the noise voltage exhibits well‐defined peaks as a function of bias voltage. The background noise exhibits a 1/f‐type spectral response, but the spectral response of some of the peaks indicates that tunneling via surface states with a single average lifetime occurs. Peaks in the noise voltage correspond in bias voltage position with structure in d2I/dV2.This publication has 4 references indexed in Scilit:
- Photosensitive Impurity-Assisted Tunneling (Au, 77°K) IN GaAs Tunnel DiodesPhysical Review Letters, 1970
- THE EFFECT OF TRAPPING STATES ON TUNNELING IN METAL-SEMICONDUCTOR JUNCTIONSApplied Physics Letters, 1969
- Shot Noise in Tunnel Diode AmplifiersProceedings of the IRE, 1960
- Excess Noise in Narrow Germanium p-n JunctionsJournal of the Physics Society Japan, 1958