Electron paramagnetic resonance identification of theSbGaheteroantisite defect in GaAs:Sb

GaAs doped with antimony (Sb) to a level of ${10}^{19}$ ${\mathrm{cm}}^{\mathrm{-}3}$ has been studied by electron paramagnetic resonance (EPR). A new EPR spectrum has been discovered which is identified as the ${\mathrm{Sb}}_{\mathrm{Ga}}$ heteroantisite defect. The electronic structure of this defect is practically identical with that of the intrinsic-anion antisite defects in GaP, GaAs, and InP. The EPR results show that Sb can be incorporated as an electrically active defect and therefore is not a suitable isovalent dopant in the growth of low-dislocation-density semi-insulating GaAs.