Localized electron states associated with Ga and As vacancies in GaAs
- 7 December 1975
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 8 (23) , L550-L553
- https://doi.org/10.1088/0022-3719/8/23/005
Abstract
A pseudopotential calculation is reported which indicates that a neutral Ga vacancy in GaAs may introduce bound states in the lower part of the forbidden band gap. An As vacancy introduces a resonant state, degenerate with the lowest conduction-band valley.Keywords
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