Optical observation of subbands in amorphous silicon ultrathin single layers
- 28 November 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (22) , 2170-2172
- https://doi.org/10.1063/1.100272
Abstract
Wavelength‐differential absorption spectroscopy has been applied to amorphous silicon ultrathin single layers. The derivative spectra clearly show a step‐like behavior for the layer of the thickness below 40 Å, indicating a splitting of the valence and conduction bands into a series of the subbands. Analysis of the observed energy shifts of subband transitions in terms of a one‐dimensional quantum well model leads to the conclusion that the electron effective mass is less than 0.48m0, where m0 denotes free‐electron mass.Keywords
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