Electronic Properties of a Photochemical Oxide-GaAs Interface
- 1 November 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (11A) , L1871-1873
- https://doi.org/10.1143/jjap.26.l1871
Abstract
The properties of a GaAs–oxide interface formed by recently proposed photochemical oxidation in water were studied. Remarkable photoluminescence intensity enhancement was observed after oxidation which previously was interpreted as “unpinning” of the Fermi level. However, the surface current transport and capacitance-voltage measurements consistently indicated a strong Fermi level pinning with an increased surface depletion. These apparently contradictory results can be explained by a new model in which photochemical oxidation does not unpin, but shifts the pinning position of the Fermi level towards the valence band edge.Keywords
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