Effect of bulk recombination current on the current gain of GaAs/AlGaAs heterojunction bipolar transistors in GaAs-on-Si
- 1 October 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (10) , 458-460
- https://doi.org/10.1109/55.43099
Abstract
The effect of bulk recombination current on the current gain of heterojunction bipolar transistors (HBTs) in GaAs-on-Si has been studied. A thin AlGaAs emitter layer is used to prevent an exposed extrinsic base region, which has previously masked the effect of the bulk recombination current on the current gain in HBTs. It is found that once the surface recombination current is removed, the current grain due to bulk recombination alone is approximately ten times lower for the HBTs in GaAs-on-Si than for HBTs in GaAs. The difference in the current gain is probably due to electrically active dislocations in the base in the HBTs in GaAs-on-Si, where the density is about 10/sup 8/ cm/sup -2/ as measured by transmission electron microscopy.Keywords
This publication has 9 references indexed in Scilit:
- Effect of emitter-base spacing on the current gain of AlGaAs/GaAs heterojunction bipolar transistorsIEEE Electron Device Letters, 1989
- Analysis of strained-layer superlattice effects on dislocation density reduction in GaAs on Si substratesApplied Physics Letters, 1989
- Defect reduction effects in GaAs on Si substrates by thermal annealingApplied Physics Letters, 1988
- Influence of buffer layer thickness on DC performance of GaAs/AlGaAs heterojunction bipolar transistors grown on silicon substratesIEEE Electron Device Letters, 1988
- A high-gain GaAs/AlGaAs n-p-n heterojunction bipolar transistor onIEEE Electron Device Letters, 1988
- Electrical activity of defects in molecular beam epitaxially grown GaAs on Si and its reduction by rapid thermal annealingApplied Physics Letters, 1987
- Two-dimensional analysis of emitter-size effect on current gain for GaAlAs/GaAs HBT'sIEEE Transactions on Electron Devices, 1987
- GaAs/AlGaAs heterojunction emitter-down bipolar transistors fabricated on GaAs-on-Si substrateIEEE Electron Device Letters, 1987
- Super-gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter edge-thinning designApplied Physics Letters, 1985