The effects of nitrogen incorporation on the properties of RF sputtered a-Six Ge1 − x alloys
- 1 November 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 94 (2) , 261-270
- https://doi.org/10.1016/s0022-3093(87)80296-x
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Infrared and optical study of a-SiN alloysJournal of Non-Crystalline Solids, 1985
- Photoluminescence excitation studies of a-SiNx:H alloysJournal of Non-Crystalline Solids, 1985
- The compositional dependence of the optical and electrical properties of hydrogenated amorphous Si-Ge films prepared by co-sputteringThin Solid Films, 1984
- Nitrogen-bonding environments in glow-discharge—depositedfilmsPhysical Review B, 1983
- Properties and structure of a-SiC:H for high-efficiency a-Si solar cellJournal of Applied Physics, 1982
- Properties of RF sputtered hydrogenated amorphous germanium-silicon alloysJournal of Non-Crystalline Solids, 1982
- Preferential Attachment of H in Amorphous Hydrogenated Binary Semiconductors and Consequent Inferior Reduction of Pseudogap State DensityPhysical Review Letters, 1981
- Infrared vibrational spectra of rf-sputtered hydrogenated amorphous siliconPhysical Review B, 1978
- Enhanced photoconductivity in nitrogen-doped amorphous silicon prepared by d.c. sputteringPhilosophical Magazine Part B, 1978
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976