Observation of the D-center in 6H-SiC p-n diodes grown by chemical vapor deposition
- 16 May 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (20) , 2730-2732
- https://doi.org/10.1063/1.111457
Abstract
The D‐center in 6H‐SiC is a boron‐related deep hole trap observed previously in LPE‐grown 6H‐SiC diodes. We report deep level transient spectroscopy (DLTS) measurements in which the D‐center signature is observed in high‐purity n‐ and p‐type epitaxial layers formed by chemical vapor deposition (CVD). An activation energy of 0.58 eV and a capture cross section between 1×10−14 cm2 and 3×10−14 cm2 was determined for this level. Even though the D‐center in these diodes is thought to arise from unintended trace contamination, we observed within the same diode a factor of twenty greater density of this level in the n‐type layer than in the p‐type layer, which is explained by a recently proposed site competition model for impurity doping during 6H‐SiC CVD growth.Keywords
This publication has 4 references indexed in Scilit:
- Point defects in silicon carbidePhysica B: Condensed Matter, 1993
- Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC WafersSpringer Proceedings in Physics, 1992
- Boron-related deep centers in 6H-SiCApplied Physics A, 1990
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974