Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC Wafers
- 1 January 1992
- book chapter
- Published by Springer Nature in Springer Proceedings in Physics
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Crystal growth of SiC by step-controlled epitaxyJournal of Crystal Growth, 1990
- Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafersApplied Physics Letters, 1990
- Growth of improved quality 3C-SiC films on 6H-SiC substratesApplied Physics Letters, 1990
- Growth rate, surface morphology, and defect microstructures of β–SiC films chemically vapor deposited on 6H–SiC substratesJournal of Materials Research, 1989
- Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substratesJournal of Applied Physics, 1988
- Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor depositionApplied Physics Letters, 1986
- Growth and morphology of 6H-SiC epitaxial layers by CVDJournal of Crystal Growth, 1978
- Epitaxial deposition of silicon carbide from silicon tetrachloride and hexaneThin Solid Films, 1976
- Electrical resistivity and Seebeck coefficients of CoSb and NiSbJournal of Applied Physics, 1973
- Epitaxial Growth of Silicon Carbide by the Thermal Reduction TechniqueJournal of the Electrochemical Society, 1966