Growth and morphology of 6H-SiC epitaxial layers by CVD
- 1 December 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 45, 144-149
- https://doi.org/10.1016/0022-0248(78)90426-8
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Epitaxial Growth of α-SiC from the Vapor PhaseJapanese Journal of Applied Physics, 1971
- Growth Characteristics of Alpha-Silicon CarbideJournal of the Electrochemical Society, 1971
- The Epitaxial Growth of Silicon CarbideJournal of the Electrochemical Society, 1966