Epitaxial Growth of α-SiC from the Vapor Phase

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Abstract
Epitaxial layers of α-SiC are grown on the (0001) and the (0001̄) faces of α-SiC substrates front the silane-propane-hydrogen system. The structure, morphology and growth rate of the layers are studied as a function of the partial pressures of the reactants and the substrate temperature. It appears that the growth process is controlled by the combined effects of propane diffusion and the rate of thermal etching of SiC. The best layers in terms of surface smoothness and crystalline perfection are obtained under low reactant partial pressures (slow growth rate conditions) at temperatures in the vicinity of 1550°C. The epitaxial layers are structurally characterized with X-ray diffraction techniques, electron scanning microscopy, and chemical etching. As grown layers exhibited n-type conduction. p-type boron doped layers are grown by using borane gas in the reactant system. Light emitting p-n junctions are prepared and electrically characterized.

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