Picosecond time-resolved plasma and temperature-induced changes of reflectivity and transmission in silicon
- 1 October 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (7) , 643-646
- https://doi.org/10.1063/1.93611
Abstract
A pump-and-probe technique is used to perform picosecond time-resolved measurements of reflectivity and transmission changes in silicon. The results provide direct evidence that lattice heating, melting, or boiling can occur on a picosecond time scale. Detailed analysis of the data provides information about the dynamics of the electron-hole plasma prior to melting and the kinetics of ultrafast phase transitions and crystal regrowth.Keywords
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