Time-Resolved Optical Transmission and Reflectivity of Pulsed-Ruby-Laser Irradiated Crystalline Silicon
- 25 January 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 48 (4) , 267-271
- https://doi.org/10.1103/physrevlett.48.267
Abstract
The time-resolved optical transmission and reflectivity of -type crystalline silicon has been observed during and after pulsed-laser irradiation. The transmission goes to zero, and remains at zero, during the period of enhanced reflectivity, contradicting reports of earlier experiments. Our measurements are in quantitative agreement with results of thermal melting model calculations and with known optical properties of molten silicon.
Keywords
This publication has 14 references indexed in Scilit:
- Induced Absorption in Silicon under Intense Laser Excitation: Evidence for a Self-Confined PlasmaPhysical Review Letters, 1981
- Time-resolved reflectivity during pulsed-laser irradiation of GaAsApplied Physics Letters, 1981
- Macroscopic theory of pulsed-laser annealing. II. Dopant diffusion and segregationPhysical Review B, 1981
- Time-resolved optical transmission of pulsed laser-irradiated siliconApplied Physics Letters, 1981
- Macroscopic theory of pulsed-laser annealing. I. Thermal transport and meltingPhysical Review B, 1981
- Nonthermal pulsed laser annealing of Si; plasma annealingPhysics Letters A, 1979
- Calculation of the dynamics of surface melting during laser annealingApplied Physics Letters, 1979
- A melting model for pulsing-laser annealing of implanted semiconductorsJournal of Applied Physics, 1979
- Theoretical analysis of thermal and mass transport in ion-implanted laser-annealed siliconApplied Physics Letters, 1978
- Arsenic diffusion in silicon melted by high-power nanosecond laser pulsingApplied Physics Letters, 1978