Time-resolved reflectivity during pulsed-laser irradiation of GaAs
- 15 June 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (12) , 971-973
- https://doi.org/10.1063/1.92239
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Reasons to believe pulsed laser annealing of Si does not involve simple thermal meltingPhysics Letters A, 1979
- Laser annealing of capped and uncapped GaAsElectronics Letters, 1979
- Dynamics of Q-switched laser annealingApplied Physics Letters, 1979
- A melting model for pulsing-laser annealing of implanted semiconductorsJournal of Applied Physics, 1979
- Theoretical analysis of thermal and mass transport in ion-implanted laser-annealed siliconApplied Physics Letters, 1978