Infrared absorption enhancement in light- and heavy-hole inverted Ga1−xInxAs/Al1−yInyAs quantum wells
- 30 December 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (27) , 3601-3603
- https://doi.org/10.1063/1.105645
Abstract
We have investigated infrared absorption properties at normal incidence in p‐type Ga1−xInxAs/Al1−yInyAs strained quantum wells. They are designed such that the ground state for holes is a light‐hole state, which results from the effects of biaxial tensile strain in the quantum wells. We find that in this light‐ and heavy‐hole inverted structure the infrared absorption from intervalence subband transitions can be greatly enhanced up to 8500 cm−1, which is comparable to that in the intrinsic Hg1−xCdxTe detector. This novel structure’s ability to detect infrared radiation at normal incidence makes it promising for infrared photodetection applications.Keywords
This publication has 8 references indexed in Scilit:
- Intersubband absorption in Ga1−xAlxSb/AlSb superlattices for infrared detectionJournal of Applied Physics, 1991
- Nonlinear optical properties of GaAs/As superlatticesPhysical Review B, 1990
- Calculation of the intersubband absorption strength in ellipsoidal-valley quantum wellsPhysical Review B, 1990
- Transfer-matrix algorithm for the calculation of the band structure of semiconductor superlatticesPhysical Review B, 1988
- Intersubband absorption of silicon-based quantum wells for infrared imagingJournal of Applied Physics, 1988
- Proposal for strained type II superlattice infrared detectorsJournal of Applied Physics, 1987
- New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlatticesApplied Physics Letters, 1987
- Electronic structure of [001]- and [111]-growth-axis semiconductor superlatticesPhysical Review B, 1987