Intersubband absorption of silicon-based quantum wells for infrared imaging
- 1 August 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (3) , 1573-1575
- https://doi.org/10.1063/1.341788
Abstract
We have calculated the 10-μm intersubband absorptoin in quantum wells made of the silicon-based system, Si/Si1−xGex. The necessary details of the effective-mass anisotropy are included in our analysis. We find that it is readily possible to achieve an absorption constant of order of 104 cm−1 in Si quantum wells with current doping technology. For [110] and [111] growth directions, a further advantage of Si quantum wells is pointed out, namely, an allowed absorption at normal incidence due to the anisotropic effective mass in Si.This publication has 13 references indexed in Scilit:
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