Growth of Ge/Si Amorphous Superlattices by Dual-Target DC Magnetron Sputtering
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Amorphous Ge/Si superlattices have been grown by dual-target dc magnetron sputtering at ambient temperature under different negative substrate bias voltages Vs. The films were studied with cross-sectional transmission electron microscopy (XTEM). All films were amorphous, but for Vs ≤ 110 V the superlattices exhibited a columnar structure. Within each column, the compositional modulation was clearly resolved except in the vicinity of the column boundaries. For 110 250 V resulted in ion induced intermixing such that at Vs ≥ 450 no compositional modulation was observed. The obtained structural results are discussed in terms of available models for ion-irradiation effects during low-temperature ballistic growth.Keywords
This publication has 4 references indexed in Scilit:
- Artificial superlattices without a sublatticeMicron and Microscopica Acta, 1991
- LOW-ENERGY ION/SURFACE INTERACTIONS DURING FILM GROWTH FROM THE VAPOR PHASEPublished by Elsevier ,1989
- Growth and structure of layered amorphous semiconductorsJournal of Non-Crystalline Solids, 1984
- Superlattice and Negative Differential Conductivity in SemiconductorsIBM Journal of Research and Development, 1970