Laser writing of high-purity gold lines
- 2 October 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (14) , 1477-1479
- https://doi.org/10.1063/1.101585
Abstract
Gold tracks of better than 98% purity have been deposited onto oxidized silicon wafers from gaseous methyl(triethylphosphine) gold(I), AuMe(Et3 P), by using 514 nm radiation from a focused cw argon ion laser. Room-temperature resistivities of 4.2 μΩ cm, comparable with bulk gold, were attained at a writing speed of 35 μm s−1 . The track profiles suggest that deposition is more rapid on the gold surface than on the SiO2 substrate.Keywords
This publication has 13 references indexed in Scilit:
- Fast photolytic laser writing of gold lines on a prenucleated substrateApplied Physics Letters, 1988
- Ultraviolet-light-induced deposition of gold filmsApplied Physics Letters, 1987
- Laser Chemical Vapor Deposition of Gold: The Effect of Organometallic StructureJournal of the Electrochemical Society, 1987
- Photolytic decomposition of gold metallopolymer thin films by UV laser direct writingJournal of Applied Physics, 1987
- Laser chemical vapor deposition of gold: Part IIJournal of Vacuum Science & Technology B, 1986
- A chemical and mechanistic view of reaction profiles in laser direct-write metallization in metallo-organic films. Gold.Journal of Applied Physics, 1986
- Laser-Induced Deposition of Gold Micropatterns from Metallopolymer Thin Films: A Photochemical ApproachMRS Proceedings, 1986
- Laser-initiated deposition reactions: Microchemistry in organogold polymer filmsApplied Physics Letters, 1985
- Laser chemical vapor deposition of goldApplied Physics Letters, 1985
- Laser-initiated microchemistry: Dynamic probes of metallopolymer thin-film decompositionApplied Physics Letters, 1985