Laser chemical vapor deposition of gold
- 1 September 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (5) , 538-540
- https://doi.org/10.1063/1.96119
Abstract
High quality gold spots and lines have been deposited from gaseous dimethyl (2, 4‐pentanedionato) gold (III) using a focused argon ion laser. Growth rates of 1 μm/s at power densities of 4×105 W/cm2 were obtained. Resistivity, threshold writing power densities, and deposition rates were measured and their relationship to the physical and chemical properties of the gaseous complex are explored.Keywords
This publication has 8 references indexed in Scilit:
- Laser chemical vapor deposition of copperApplied Physics Letters, 1985
- Laser Chemical Vapor Deposition Using Continuous Wave And Pulsed LasersOptical Engineering, 1984
- Laser induced chemical vapor deposition of Ni by decomposition of Ni(CO)4Applied Physics A, 1983
- Analysis of thin films arising from electron-, ion- and photon-beam-induced decomposition of Cr(CO)6 and Al(CH3)3Thin Solid Films, 1982
- Cadmium deposition on transparent substrates by laser induced dissociation of Cd(CH3)2 at visible wavelengthsApplied Physics A, 1982
- Laser chemical vapor deposition: A technique for selective area depositionJournal of Applied Physics, 1981
- Laser-initiated metal deposition on GaAs substratesPhysics Letters A, 1981
- 157. The organic compounds of gold. Part VII. Methyl and ethyl compoundsJournal of the Chemical Society, 1939