Pressure-driven metal-insulator transition in La- and Tm-doped SmS by exciton condensation
- 1 July 1997
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 237-238, 154-155
- https://doi.org/10.1016/s0921-4526(97)00080-x
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Pressure-driven metal-insulator transition in La-doped SmS: Excitonic condensationPhysical Review B, 1995
- Pressure-driven semiconductor-metal transition in intermediate-valence and the concept of an excitonic insulatorPhysical Review B, 1990
- The transition to the metallic statePhilosophical Magazine, 1961