Thermal stability of defect complexes due to high dose MeV implantation in silicon
- 27 January 2000
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 71 (1-3) , 327-332
- https://doi.org/10.1016/s0921-5107(99)00400-6
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Energetics of Self-Interstitial Clusters in SiPhysical Review Letters, 1999
- Modeling of the kinetics of dislocation loopsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999
- Electrical signatures and thermal stability of interstitial clusters in ion implanted SiJournal of Applied Physics, 1998
- Electrical characterization of MeV heavy-ion-induced damage in silicon: Evidence for defect migration and clusteringJournal of Applied Physics, 1998
- Evolution from point to extended defects in ion implanted siliconJournal of Applied Physics, 1997
- Self-Interstitial Clustering in Crystalline SiliconPhysical Review Letters, 1997
- Ion beams in silicon processing and characterizationJournal of Applied Physics, 1997
- Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomenaApplied Physics Letters, 1996
- Structural relaxation and defect annihilation in pure amorphous siliconPhysical Review B, 1991
- Divacancy acceptor levels in ion-irradiated siliconPhysical Review B, 1991