Plasma-enhanced chemical vapor deposition of β-tungsten, a metastable phase
- 15 September 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (6) , 633-635
- https://doi.org/10.1063/1.95337
Abstract
Plasma-enhanced chemical vapor deposition of a metastable phase of tungsten ( β-W) is performed using tungsten hexafluoride and hydrogen as source gases. At 350 °C, the as-deposited resistivity of these films is ∼50 μΩ cm. After heat treatments between 650 and 750 °C in forming gas, the resistivity drops below 11 μΩ cm. Concomitant with this resistivity change is a phase change to α-W, the equilibrium, body-centered-cubic form.Keywords
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