Amorphization of ion-implanted layers in silicon using photoacoustic detection
- 4 February 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (5) , 496-498
- https://doi.org/10.1063/1.104619
Abstract
The influence of ion implantation in the thermal properties of silicon wafers at room temperature is investigated using the photoacoustic technique. It is suggested that the observed decrease of the values of both thermal diffusivity and conductivity, as the implantation dose increases, is due to the amorphization of the implanted layer.Keywords
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