Logarithmic and power law corrections in two-dimensional electronic transport
- 30 April 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (12) , L371-L376
- https://doi.org/10.1088/0022-3719/15/12/004
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Logarithmic corrections to two-dimensional transport in silicon inversion layersJournal of Physics C: Solid State Physics, 1981
- The conductivity of disordered systems and the scaling theoryJournal of Physics C: Solid State Physics, 1981
- Localisation in disordered two-dimensional systems and the universal dependence on diffusion lengthJournal of Physics C: Solid State Physics, 1981
- The observation of interaction and localisation effects in a two-dimensional electron gas at low temperaturesJournal of Physics C: Solid State Physics, 1980
- Calculated Temperature Dependence of Mobility in Silicon Inversion LayersPhysical Review Letters, 1980
- Scaling Theory of Localization: Absence of Quantum Diffusion in Two DimensionsPhysical Review Letters, 1979
- The Anderson transition in silicon inversion layersSurface Science, 1976
- The Anderson transitionProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1975