Logarithmic corrections to two-dimensional transport in silicon inversion layers
- 30 December 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (36) , 5737-5762
- https://doi.org/10.1088/0022-3719/14/36/015
Abstract
It is shown that the logarithmic corrections to the two-dimensional conductance arise from both interaction and incipient localisation effects. A transition between these two type of behaviour can be achieved by a change of electron temperature in the presence of a magnetic field, or just by the application of a magnetic field. The magnetic field suppresses the weak localisation and enhances the effects of the interaction. Results on conductance, magnetoconductance and Hall effect are presented and discussed.Keywords
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