Magnetic separation of localisation and interaction effects in a two-dimensional electron gas at low temperatures
- 10 July 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (19) , L531-L537
- https://doi.org/10.1088/0022-3719/14/19/003
Abstract
The authors show that by the application of a magnetic field it is possible to achieve complete separation of localisation and interaction mechanisms in two dimensions. Measurements of the conductance of silicon inversion layers show that, at certain values of magnetic field, it is also possible to achieve metallic conduction near 50 mK. It is also shown that the appearance of the interaction mechanism is not strongly dependent on the direction of the magnetic field, implying that the origin of the effect is in electron spin rather than cyclotron orbit motion. The implications for the quantised Hall resistor are discussed.Keywords
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