The photofield effect in a-Si: H thin film MOS transistors Theory and measurement
- 1 July 1985
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 52 (1) , 59-70
- https://doi.org/10.1080/13642818508243165
Abstract
Photofield-effect measurements have been carried out on hydrogenated amorphous silicon metal-oxide-semiconductor (MOS) thin film transistors. An expression for the photocurrent as a function of the gate voltage has been derived, and the experimental results are in good agreement with this expression. The densities of the donor and acceptor states at mid-gap are estimated with the help of the model. A method for determining the width of the band gap is also suggested.Keywords
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