Fabrication and characterization of novel electronic devices using tetrahedral amorphous carbon
- 1 August 1998
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 7 (8) , 1172-1177
- https://doi.org/10.1016/s0925-9635(98)00176-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Substrate bias effects on the structural and electronic properties of tetrahedral amorphous carbonPhysical Review B, 1996
- Gap states, doping and bonding in tetrahedral amorphous carbonDiamond and Related Materials, 1995
- Properties of tetrahedral amorphous carbon prepared by vacuum arc depositionDiamond and Related Materials, 1991
- Modeling the memory retention characteristics of silicon-nitride-oxide-silicon nonvolatile transistors in a varying thermal environmentJournal of Applied Physics, 1990
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968
- New conduction and reversible memory phenomena in thin insulating filmsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1967
- Electron Emission, Electroluminescence, and Voltage-Controlled Negative Resistance in Al–Al2O3–Au DiodesJournal of Applied Physics, 1965
- Impurity Conduction and Negative Resistance in Thin Oxide FilmsJournal of Applied Physics, 1964
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Electron-Hole Recombination in GermaniumPhysical Review B, 1952