Theory of impact ionization and Auger recombination inTe
- 24 August 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 69 (8) , 1280-1282
- https://doi.org/10.1103/physrevlett.69.1280
Abstract
We derived the impact ionization and Auger recombination rates within the framework of the six-band Kane model. The theory involves the electron distribution function and average electron energy which we computed using Monte Carlo simulations, along with the electron drift velocity. The excess carrier concentration is then determined from the balance equation. The results of the calculation are in good agreement with experimental data for HgCdTe at 77 K.Keywords
This publication has 4 references indexed in Scilit:
- Monte Carlo simulation of electron transport in mercury cadmium tellurideJournal of Applied Physics, 1992
- Monte Carlo simulation of semiconductor devicesComputer Physics Communications, 1991
- Monte Carlo calculation of electron impact ionization in bulk InAs and HgCdTeJournal of Applied Physics, 1991
- Narrow-Gap SemiconductorsPublished by Springer Nature ,1983