Far-infrared emission from two-dimensional electron and hole gases in GaAs/(AlGa)As heterojunctions

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Abstract
An investigation has been made of the far-infrared emission (FIR) from two-dimensional electron and hole gases (2DEGs and 2DHGs) in GaAs/(AlGa)As heterostructures as a function of source-drain current and magnetic field. The results on 2DEGs indicate that the proportion of FIR coming from the bulk of the 2DEG, rather than from the diagonally opposite corners near the contacts where a significant amount of the dissipation takes place, varies with both current and magnetic field. The results on PDHGs suggest that the carrier temperatures are very much lower than those in 2DEGs for the same source-drain current.