3 Gbit/s two-level to 1.5 Gsymbol/s four-level convertor GaAs IC for two electrode semiconductor optical amplifier modulators
- 24 June 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (13) , 1173-1174
- https://doi.org/10.1049/el:19930784
Abstract
A novel design of a 50 Ω impedance matched two-to-four level convertor GaAs IC for two electrode semiconductor optical amplifier modulators is presented. Eye diagrams with good eye openings and 0.33 V spacing between adjacent logic levels are demonstrated for bit rates up to 3 Gbit/s.Keywords
This publication has 1 reference indexed in Scilit:
- Characterization of high bit rate phase modulators based on semiconductor optical amplifiersPublished by Optica Publishing Group ,1991