Properties of InSbp-njunctions fabricated by Zn implantation with subsequent drive-in diffusion
- 1 January 1980
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 49 (1-3) , 45-49
- https://doi.org/10.1080/00337578008243065
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Planar InSb photodiodes fabricated by Be and Mg ion implantationSolid-State Electronics, 1975
- Ion implantation in InAs and InSbRadiation Effects, 1970
- The Diffusion of Zinc and Cadmium in Indium AntimonideProceedings of the Physical Society, 1962
- Diffusion of Zinc and Tin in Indium AntimonidePhysical Review B, 1961
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957