Electrical and Optical Properties of Intermetallic Compounds. IV. Magnesium Stannide

Measurements of electrical and optical properties of this semiconductor have been made over a wide temperature range. Results from conductivity and Hall effect measurements as well as optical absorption data indicate an energy gap of 0.33 ev at $T=0\mathrm{}°$K. Mobility values were found to be ${\mu }_e=320\mathrm{}$ ${\mathrm{cm}}^2$/volt-sec (for electrons) and ${\mu }_p=260\mathrm{}$ ${\mathrm{cm}}^2$/volt-sec (for holes) at room temperature. Both parameters are proportional to $T^{-2.2\mathrm{}}$. Appreciable photoconductivity is observed at 85°K and at 5°K.