Continuous wave high-power, high-temperature semiconductor laser phase-locked arrays
- 1 December 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (11) , 1030-1032
- https://doi.org/10.1063/1.93382
Abstract
Continuous wave GaAlAs semiconductor laser arrays are reported to emit 585-mW/facet cw optical output power at room temperature. The lasers operate over 100 °C with output powers in excess of 200 mW/facet cw. Laser thresholds are as low as 130 mA, differential quantum efficiencies exceed 60% for some devices, and very high total power conversion efficiencies of over 20% are observed.Keywords
This publication has 23 references indexed in Scilit:
- High-power diode lasers for optical recording with operating lifetimes in excess of 10 000 hElectronics Letters, 1982
- Constricted double-heterojunction AlGaAs diode lasers: Structures and electrooptical characteristicsIEEE Journal of Quantum Electronics, 1981
- Highly efficient (GaAl)As buried-heterostructure lasers with buried optical guideApplied Physics Letters, 1979
- Fundamental transverse and longitudinal mode oscillation in terraced substrate GaAs-(GaAl)As lasersIEEE Journal of Quantum Electronics, 1979
- An AlGaAs window structure laserIEEE Journal of Quantum Electronics, 1979
- GaAs-AlxGa1-xAs strip buried heterostructure lasersIEEE Journal of Quantum Electronics, 1979
- High optical power density emission from a ’’window-stripe’’ AlGaAs double-heterostructure laserApplied Physics Letters, 1979
- CW Optical Power from (Al·Ga)As Double Heterostructure LasersJapanese Journal of Applied Physics, 1976
- Limitations of power outputs from continuously operating GaAs-Ga1−xAlxAs double-heterostructure lasersJournal of Applied Physics, 1976
- Continuous Operation over 2500 h of Double Heterostructure Laser Diodes with Output Powers More Than 80 mWJapanese Journal of Applied Physics, 1974