An AlGaAs window structure laser
- 1 August 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 15 (8) , 775-781
- https://doi.org/10.1109/jqe.1979.1070102
Abstract
Extremely high optical power density emission was achieved with an AlGaAs "window structure" laser in CW operation as well as pulsed operation by increasing the threshold of the catastrophic optical damage (COD) on mirrors. A Zn diffused "window stripe" laser consists of the Zn diffused p-type light emitting region with low effective energy gap in the central part and the n-type window regions with high effective energy gap at both ends of the cavity. The maximum available optical power in pulsed operation was at least one order of magnitude higher than the COD threshold in conventional structures. 80 mW optical power in CW operation was achieved in the Zn diffused window stripe laser with a 5 μm wide stripe. Furthermore, gradual degradation due to the photoenhanced mirror oxidation has been reduced significantly under long term CW operation.Keywords
This publication has 24 references indexed in Scilit:
- High optical power density emission from a ’’window-stripe’’ AlGaAs double-heterostructure laserApplied Physics Letters, 1979
- Stable operation of buried-heterostructure Ga1−xAlxAs lasers during accelerated agingApplied Physics Letters, 1978
- High temperature single-mode cw operation with a junction-up TJS laserApplied Physics Letters, 1978
- Degradation of (AlGa)As DH lasers due to facet oxidationApplied Physics Letters, 1978
- Continuously operated (Al,Ga)As double-heterostructure lasers with 70 °C lifetimes as long as two yearsApplied Physics Letters, 1977
- Degradation of high-radiance Ga1−xAlxAs LED’sApplied Physics Letters, 1977
- Degradation of photoluminescence intensity caused by excitation-enhanced oxidation of GaAs surfacesApplied Physics Letters, 1977
- Long-term degradation of GaAs-Ga1−xAlxAs DH lasers due to facet erosionJournal of Applied Physics, 1977
- Resonant Brillouin Scattering in GaAsPhysical Review B, 1972
- Internal self-damage of gallium arsenide lasersIEEE Journal of Quantum Electronics, 1966