High-quality single GaAs quantum wells grown by metalorganic chemical vapor deposition
- 1 March 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (5) , 508-510
- https://doi.org/10.1063/1.94814
Abstract
GaAs-AlxGa1−xAs single and multiquantum well structures grown by metalorganic chemical vapor deposition have been examined for the first time in detail using low-temperature photoluminescence, cathodoluminescence, and transmission electron microscopy. The better heterointerfaces are very uniform with a large scale roughness of approximately plus or minus a monolayer along the interface on a scale of the exciton diameter or larger and a composition gradient width of less than three monolayers across the interface. The GaAs well interface roughness and associated impurity luminescence are not very sensitive to the thickness of the AlxGa1−xAs prelayer. With nonoptimum growth conditions, the quantum well photoluminescence characteristics suggest a substantial amount of band filling due to holes presumably from the AlxGa1−xAs layers.Keywords
This publication has 16 references indexed in Scilit:
- Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1984
- Extrinsic photoluminescence from GaAs quantum wellsPhysica B+C, 1983
- Extrinsic layer at AlxGa1−xAs-GaAs interfacesApplied Physics Letters, 1982
- Characterization of high purity GaAs grown by molecular beam epitaxyApplied Physics Letters, 1982
- AlGaAs-GaAs lasers grown by metalorganic chemical vapor deposition — A reviewJournal of Crystal Growth, 1981
- Al-Ga disorder in AlxGa1−xAs alloys grown by molecular beam epitaxyApplied Physics Letters, 1981
- Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structuresSolid State Communications, 1981
- Luminescence studies of optically pumped quantum wells in GaAs-multilayer structuresPhysical Review B, 1980
- Room-temperature continuous operation of photopumped MO-CVD AlxGa1−xAs-GaAs-AlxGa1−xAs quantum-well lasersApplied Physics Letters, 1978
- Transmission electron microscopy of interfaces in III–V compound semiconductorsJournal of Vacuum Science and Technology, 1977