Limits of the Constant Photocurrent Method (CPM) for the determination of the deep defect density in amorphous hydrogenated silicon (a-Si:H)
- 1 December 1993
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 164-166, 427-430
- https://doi.org/10.1016/0022-3093(93)90581-h
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Subbandgap absorption spectra of slightly doped a-Si:H measured with constant photocurrent method (CPM) and photothermal deflection spectroscopy (PDS)Solid State Communications, 1993
- Corrections to the constant photoconductivity method for determining defect densities, with application to amorphous siliconJournal of Applied Physics, 1992
- How to reach more precise interpretation of subgap absorption spectra in terms of deep defect density in a-Si:HJournal of Non-Crystalline Solids, 1991
- The thermal quenching and supralinearity of photoconductivity in hydrogenated amorphous siliconPhilosophical Magazine Part B, 1986
- Direct measurement of the gap states and band tail absorption by constant photocurrent method in amorphous siliconSolid State Communications, 1981