InP double-hetero bipolar transistor technology for 130 GHz clock speed
- 21 February 2006
- journal article
- research article
- Published by Wiley in physica status solidi (c)
- Vol. 3 (3) , 452-455
- https://doi.org/10.1002/pssc.200564169
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, f/sub max//spl ges/450 GHzIEEE Electron Device Letters, 2005
- High performance InP/InGaAs/InP DHBTs with patterned sub-collector fabricated by elevated temperature N+ implantSolid-State Electronics, 2005
- Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600GHzApplied Physics Letters, 2005