1.54 μm electroluminescence from erbium (III) tris(8-hydroxyquinoline) (ErQ)-based organic light-emitting diodes
- 6 September 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (10) , 1380-1382
- https://doi.org/10.1063/1.124700
Abstract
Organic light-emitting diodes have been fabricated using erbium tris(8-hydroxyquinoline) as the emitting layer and N, N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine as the hole-transporting layer. Room-temperature electroluminescence was observed at 1.54 μm due to intra-atomic transitions between the I13/24 and I15/24 levels in the Er3+ ion. These results suggest a possible route to producing a silicon-compatible 1.54 μm source technology.Keywords
This publication has 6 references indexed in Scilit:
- Erbium (III) tris(8-hydroxyquinoline) (ErQ): A potential material for silicon compatible 1.5 μm emittersApplied Physics Letters, 1999
- Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anodeApplied Physics Letters, 1999
- Erbium implanted thin film photonic materialsJournal of Applied Physics, 1997
- Silicon compatible organic light emitting diodeJournal of Lightwave Technology, 1994
- Denatured tris(quinolin-8-olato)aluminium: a new material for organic electroluminescent cellsJournal of Materials Chemistry, 1992
- Organic electroluminescent diodesApplied Physics Letters, 1987