Deformation behaviour and dislocation formation in undoped and doped (Zn, S)InP crystals
- 30 June 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 71 (3) , 771-781
- https://doi.org/10.1016/0022-0248(85)90390-2
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- The theory and practice of dislocation reduction in GaAs and InPJournal of Crystal Growth, 1984
- Thermal analysis of LEC InP growthJournal of Crystal Growth, 1983
- Double doped low etch pit density InP with reduced optical absorptionJournal of Crystal Growth, 1983
- Deformation behaviour of single crystals of InP in uniaxial compressionJournal of Materials Science, 1980
- Impurity effect on grown-in dislocation density of InP and GaAs crystalsJournal of Applied Physics, 1978
- Temperature and Orientation Dependence of Plastic Deformation in GaAs Single Crystals Doped with Si, Cr, or ZnJournal of the American Ceramic Society, 1975
- Révélation métallographique des défauts cristallins dans InPJournal of Crystal Growth, 1975
- Phase Equilibria and Vapor Pressures of Pure Phosphorus and of the Indium/Phosphorus System and Their Implications Regarding Crystal Growth of InPJournal of the Electrochemical Society, 1974
- Diffusion of mercury in indium arsenideJournal of Physics and Chemistry of Solids, 1971
- Copper Precipitation on Dislocations in SiliconJournal of Applied Physics, 1956