Thermal analysis of LEC InP growth
- 1 November 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 64 (1) , 40-47
- https://doi.org/10.1016/0022-0248(83)90246-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Sources of silicon contamination in LEC-grown InP crystalsJournal of Crystal Growth, 1983
- LEC growth and characterization of undoped InP crystalsJournal of Crystal Growth, 1981
- Growth of Dislocation-Free Undoped InP CrystalsJapanese Journal of Applied Physics, 1980
- A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs CrystalsBell System Technical Journal, 1980
- Reproducible preparation of twin-free InP crystals using the LEC techniqueMaterials Research Bulletin, 1980
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965