Sources of silicon contamination in LEC-grown InP crystals
- 1 November 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 64 (1) , 37-39
- https://doi.org/10.1016/0022-0248(83)90245-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Thermal analysis of LEC InP growthJournal of Crystal Growth, 1983
- LEC growth and characterization of undoped InP crystalsJournal of Crystal Growth, 1981
- Silicon Contamination of InP Synthesized under High Phosphorus PressureJournal of the Electrochemical Society, 1981
- Impurities in single crystal indium phosphideJournal of Materials Science, 1980
- Indium PhosphideJournal of the Electrochemical Society, 1973
- Crystal growth and properties of group IV doped indium phosphideJournal of Crystal Growth, 1972