Flying-spot scanning for the separate mapping of resistivity and minority-carrier lifetime in silicon
- 1 August 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (8) , 779-786
- https://doi.org/10.1016/0038-1101(86)90179-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Minority-carrier lifetime mapping in silicon using a microprocessor-controlled flying-spot scannerJournal of Physics E: Scientific Instruments, 1985
- Measurement of Minority-Carrier Diffusion Coefficient in Silicon by AC Photo-Current MethodJapanese Journal of Applied Physics, 1983
- Laser Scanning Technique for the Detection of Resistivity and Lifetime Inhomogeneities in Semiconductor DevicesPhysica Scripta, 1978
- Electron-Beam Excited Minority-Carrier Diffusion Profiles in SemiconductorsJournal of Applied Physics, 1972
- Properties of gold in siliconSolid-State Electronics, 1966