Measurement of Minority-Carrier Diffusion Coefficient in Silicon by AC Photo-Current Method
- 1 February 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (2R) , 276-280
- https://doi.org/10.1143/jjap.22.276
Abstract
The ac photo-current method was studied and improved theoretically as a method of determining the diffusion coefficient and lifetime mapping of a semiconductor wafer. It was found that if the diffusion length of excess carriers is greater than the junction depth of a p-n diode structure, the phase shift of the ac photo-current due to short-wavelength light is independent of the lifetime and is determined by the diffusion coefficient. If the diffusion length is shorter than the junction depth, on the other hand, the phase shift is influenced by the lifetime as well as by the diffusion coefficient. The results were used to measure the diffusion coefficient of holes in n-Si.Keywords
This publication has 12 references indexed in Scilit:
- Effect of surface recombination on the transient decay of excess carriers produced by short wavelength laser pulsesSolid-State Electronics, 1982
- Measurement of minority carrier lifetime in GaAs and GaAs1−xPx with an intensity-modulated electron beamSolid-State Electronics, 1982
- Diffusion length determination in p-n junction diodes and solar cellsApplied Physics Letters, 1980
- Minority-carrier diffusion coefficients in highly doped siliconApplied Physics Letters, 1979
- Measurement of minority carrier lifetime and diffusion length in silicon epitaxial layers by means of the photocurrent techniqueSolid-State Electronics, 1978
- Determination of diffusion length and surface recombination velocity by light excitationSolid-State Electronics, 1978
- Theory of diffusion constant-, lifetime- and surface recombination velocity-measurements with the scanning electron microscopeSolid-State Electronics, 1978
- Determination of minority-carrier lifetime and surface recombination velocity with high spacial resolutionIEEE Transactions on Electron Devices, 1977
- Hole drift velocity in siliconPhysical Review B, 1975
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955